CMOS VS NMOS IN DYNAMIC RAM DESIGN.

被引：0
|
作者：
Madland, Paul
Schutz, Joseph
Green, Richard
Kung, Roger
机构：
来源：
New Electronics | 1984年 / 17卷 / 04期
关键词：
DATA STORAGE; DIGITAL - Random Access;
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学科分类号：
摘要：
CMOS technology has proved to be a viable alternative to NMOS for use in dynamic RAMs. The paper discusses several benefits of this technology, including superior refresh characteristics, more capacitance, advantages in basic clock generation, and the use of static buffers.
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页码：41 / 42
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