This disclosure suggests the addition of a bipolar complementary emitter follower driver to a complementary metal oxide semiconductor (CMOS) logic circuit. The modification will improve its ability to drive highly capacitive loads and long metallurgy lines. The field-effect transistor bipolar circuit combines complementary FET inverters and complementary bipolar emitter followers. This produces a circuit which has the low power dissipation of CMOS along with the ability to drive highly capacitive loads which bipolar logic circuits have.