COMPLEMENTARY FET BIPOLAR CIRCUIT.

被引:0
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作者
Anon
机构
来源
IBM technical disclosure bulletin | 1986年 / 29卷 / 04期
关键词
AMPLIFIERS; CATHODE FOLLOWER - LOGIC CIRCUITS - TRANSISTORS; FIELD EFFECT;
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学科分类号
摘要
This disclosure suggests the addition of a bipolar complementary emitter follower driver to a complementary metal oxide semiconductor (CMOS) logic circuit. The modification will improve its ability to drive highly capacitive loads and long metallurgy lines. The field-effect transistor bipolar circuit combines complementary FET inverters and complementary bipolar emitter followers. This produces a circuit which has the low power dissipation of CMOS along with the ability to drive highly capacitive loads which bipolar logic circuits have.
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页码:1857 / 1858
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