Silylated photoresist profiles imaged at 193 nm

被引：0
|
作者：
Hargreaves, John
机构：
来源：
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1998年 / 16卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] The kinetics of a negative-tone acrylic photoresist for 193-nm lithography
    Fu, SC
    Hsieh, KH
    JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2000, 38 (06) : 954 - 961
  • [22] Novel 193nm photoresist based on olefin-containing Lactones
    Yoon, KS
    Jung, DW
    Lee, S
    Lee, SH
    Choi, SJ
    Woo, SG
    Moon, JT
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 688 - 694
  • [23] Cycloolefin copolymer containing hindered hydroxyl group for 193nm Photoresist
    Cho, SD
    Joo, HS
    Seo, DC
    Song, JY
    Kim, KM
    Park, JH
    Jung, JC
    Lee, SK
    Bok, CK
    Moon, SC
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 592 - 602
  • [24] Progress of a CVD-based photoresist 193-nm lithography process
    Lee, C
    Sugiarto, D
    Liao, L
    Mui, D
    Weidman, T
    Nault, M
    Tryba, T
    MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 329 - 341
  • [25] LWR Reduction by Photoresist Formulation Optimization for 193nm Immersion Lithography
    Hsu, Dennis Shu-Hao
    Hsieh, Wei-Hsien
    Huang, Chun-Yen
    Wu, Wen-Bin
    Shih, Chiang-Lin
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIX, 2012, 8325
  • [26] Thermal flow property for 193nm photoresist with low dispersion polymer
    Lee, TY
    Yu, CY
    Hsui, MY
    Hayashi, R
    Hirayama, T
    Iwai, T
    Komano, H
    Shih, JC
    Owe-Yang, DC
    Ho, BC
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2004, 17 (04) : 541 - 544
  • [27] Advantages of BARC and photoresist matching for 193-nm photosensitive BARC applications
    Lowes, Joyce
    Pham, Victor
    Meador, Jim
    Stroud, Charlyn
    Rosas, Ferdinand
    Mercado, Ramil-Marcelo L.
    Slezak, Mark
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2, 2010, 7639
  • [28] SURFACE-IMAGED SILICON POLYMERS FOR 193-NM EXCIMER LASER LITHOGRAPHY
    KUNZ, RR
    HORN, MW
    WALLRAFF, GM
    BIANCONI, PA
    MILLER, RD
    GOODMAN, RW
    SMITH, DA
    ESHELMAN, JR
    GINSBERG, EJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4327 - 4331
  • [29] Surface-imaged silicon polymers for 193-nm excimer laser lithography
    Kunz, Roderick R., 1600, (31):
  • [30] Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching
    Kim, Myeong-Cheol
    Shamiryan, Denis
    Jung, Youngjae
    Boullart, Werner
    Kang, Chang-Jin
    Cho, Han-Ku
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 2645 - 2652
12345