Silylated photoresist profiles imaged at 193 nm

被引：0
|
作者：
Hargreaves, John
机构：
来源：
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1998年 / 16卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Silylated photoresist profiles imaged at 193 nm
    Hewlett-Packard Laboratories, Hewlett-Packard Company, P.O. Box 10350, Palo Alto, CA 94303-0867, United States
    J Vac Sci Technol B Microelectron Nanometer Struct, 3 (1249-1251):
  • [2] Silylated photoresist profiles imaged at 193 nm
    Hargreaves, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1249 - 1251
  • [3] Lithographic characteristics of 193nm resists imaged at 193nm and 248nm
    Opitz, J
    Allen, RD
    Wallow, TI
    Wallraff, GM
    Hofer, DC
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 571 - 578
  • [4] New Bilayer Positive Photoresist for 193 nm Photolithography
    Kim, Young-Dab
    Park, Sang-Jin
    Lee, Haiwon
    Kim, Eung-Ryul
    Choi, Sang-Jun
    Lee, Si-Hyeung
    Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, 327 : 279 - 282
  • [5] Photoresist systems for use in 193 NM microlithography.
    Dabbagh, G
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 220 : U113 - U113
  • [6] High index nanocomposite photoresist for 193 nm lithography
    Bae, Woo Jin
    Trikeriotis, Markos
    Rodriguez, Robert
    Zettel, Michael F.
    Piscani, Emil
    Ober, Christopher K.
    Giannelis, Emmanuel P.
    Zimmerman, Paul
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
  • [7] Single-layer photoresist develops at 193 nm
    不详
    LASER FOCUS WORLD, 1997, 33 (06): : 13 - 13
  • [8] New bilayer positive photoresist for 193 nm photolithography
    Kim, YD
    Park, SJ
    Lee, H
    Kim, ER
    Choi, SJ
    Lee, SH
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1999, 327 : 279 - 282
  • [9] Evaluation of 193 nm Photoresist Material at Advanced Immersion Nodes
    Hao, Jing-an
    Xu, Yao
    Liu, Chang
    Wu, Qiang
    Shi, Xuelong
    Gu, Yiming
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 263 - 267
  • [10] 193nm contact photoresist reflow feasibility study
    Lucas, K
    Slezak, M
    Ercken, M
    Van Roey, F
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 725 - 736
12345