共 50 条
- [21] Measurement of shallow dopant profile using scanning capacitance microscopy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6B): : 3990 - 3994
- [23] Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3): : 148 - 151
- [24] Two dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 720 - 724
- [25] Quantitative ultra shallow dopant profile measurement by scanning capacitance microscopy MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 519 - 522
- [26] Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 471 - 475
- [27] Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 361 - 368
- [29] Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement DEVICE AND PROCESS TECHNOLOGIES FOR MEMS, MICROELECTRONICS, AND PHOTONICS III, 2004, 5276 : 548 - 555
- [30] Lateral dopant profiles in polycrystalline Si delineated by scanning capacitance and transmission electron microscopy PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY, 2001, : 313 - 314