GALLIUM ARSENIDE TRANSISTORS: POWER AT HIGHER FREQUENCIES.

被引：0
|
作者：
Turner, Jim
机构：
来源：
| 1600年
关键词：
712 Electronic and Thermionic Materials - 714 Electronic Components and Tubes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] RELIABILITY OF MICROWAVE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS
    BELLIER, SP
    HAYTHORNTHWAITE, RF
    MAY, JL
    WOODS, PJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, : 193 - 199
  • [42] HIGH-SPEED GALLIUM-ARSENIDE TRANSISTORS FOR LOGIC APPLICATIONS
    EASTMAN, LF
    AIP CONFERENCE PROCEEDINGS, 1984, (122) : 271 - 279
  • [43] NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS
    STATZ, H
    HAUS, HA
    PUCEL, RA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) : 549 - 562
  • [44] PHYSICS FOR NUMERICAL-SIMULATION OF SILICON AND GALLIUM-ARSENIDE TRANSISTORS
    BENNETT, HS
    LOWNEY, JR
    SOLID-STATE ELECTRONICS, 1990, 33 (06) : 675 - 691
  • [45] Simulation of gallium-arsenide based high electron mobility transistors
    Quay, R
    Massler, H
    Kellner, W
    Grasser, T
    Palankovski, V
    Selberherr, S
    2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2000, : 74 - 77
  • [46] Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)
    Schultheis, R
    Bovolon, N
    Müller, JE
    Zwicknagl, P
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2000, 10 (01) : 33 - 42
  • [47] Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)
    Schultheis, R., 2000, John Wiley & Sons Inc, New York, NY, United States (10)
  • [48] Extended oxide-trap extraction method to low frequencies. for irradiated MOS transistors
    Djezzar, B
    Smatti, A
    Oussalah, S
    ICM 2003: PROCEEDINGS OF THE 15TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2003, : 387 - 390
  • [49] DESIGN CONSIDERATIONS OF JUNCTION TRANSISTORS AT HIGHER FREQUENCIES
    PUCEL, RA
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (07): : 879 - 879
  • [50] THERMOELECTRIC POWER OF STRONGLY COMPENSATED TYPE GALLIUM ARSENIDE
    EMELYANENKO, OV
    KLOTYNSH, EE
    NASLEDOV, DN
    SIDOROV, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1913 - +
12345