共 50 条
- [42] Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes 1600, American Institute of Physics Inc. (123):
- [46] Investigation of stacking faults in 4H-SiC using the electron-beam-induced current method Yakimov, E. B., 1600, Izdatel'stvo Nauka (07): : 856 - 858
- [48] 4H-SiC pin diodes for microwave applications CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 2005, 1-2 : 17 - 25
- [49] Physical Modelling of 4H-SiC PiN Diodes SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 993 - +
- [50] Extended defects in 4H-SiC PIN diodes SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 199 - 204