Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealing

被引：0
作者：
Suemitsu, Maki [1 ]
Terada, Koji [1 ]
Nishijima, Masaaki [1 ]
Miyamoto, Nobuo [1 ]
机构：
[1] Tohoku Univ, Sendai, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1992年 / 31卷 / 12 A期
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