Carbon and silicon doping in GaAs and AlAs grown on (3 1 1)-oriented GaAs substrates by metalorganic chemical vapor deposition

被引：0
|
作者：
NTT Optoelectronics Lab, Kanagawa, Japan [1 ]
机构：
来源：
J Cryst Growth | / 1-2卷 / 33-40期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine
    Sekiguchi, S
    Miyamoto, T
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2638 - 2639
  • [32] InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
    Heinrichsdorff, F
    Krost, A
    Kirstaedter, N
    Mao, MH
    Grundmann, M
    Bimberg, D
    Kosogov, AO
    Werner, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4129 - 4133
  • [33] Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine
    Sekiguchi, Shigeaki
    Miyamoto, Tomoyuki
    Koyama, Fumio
    Iga, Kenichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (5 A): : 2638 - 2639
  • [34] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    WANG, CH
    CHENG, KY
    YANG, SJ
    APPLIED PHYSICS LETTERS, 1985, 46 (10) : 962 - 964
  • [35] CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KUECH, TF
    POTEMSKI, R
    CHAPPELL, TI
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1196 - 1203
  • [36] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SWAMINATHAN, V
    VANHAREN, DL
    ZILKO, JL
    LU, PY
    SCHUMAKER, NE
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5349 - 5353
  • [37] METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF CD1-YZNYTE EPITAXIAL LAYERS ON GAAS AND GAAS/SI SUBSTRATES
    AHLGREN, WL
    JOHNSON, SM
    SMITH, EJ
    RUTH, RP
    JOHNSTON, BC
    KALISHER, MH
    COCKRUM, CA
    JAMES, TW
    ARNEY, DL
    ZIEGLER, CK
    LICK, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 331 - 337
  • [38] (ALAS)1/2(GAAS)1/2 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL GAAS SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
    FUKUI, T
    SAITO, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1373 - 1377
  • [39] Quality-enhanced GaAs layers grown on Ge/Si substrates by metalorganic chemical vapor deposition
    Kim, KS
    Kim, JH
    Lim, DH
    Yang, GM
    Kim, JY
    Lee, HJ
    JOURNAL OF CRYSTAL GROWTH, 1997, 179 (3-4) : 427 - 432
  • [40] InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition
    Dupuis, RD
    Ryou, JH
    Heller, RD
    Walter, G
    Kellogg, DA
    Holonyak, N
    Reddy, CV
    Narayanamurti, V
    Mathes, DT
    Hull, R
    PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 643 - 648
12345