Low power 20 GHz SiGe dual-modulus prescaler

被引：0

作者：

Knapp, Herbert ^{[1
]}

Meister, Thomas F. ^{[1
]}

Wurzer, Martin ^{[1
]}

Aufinger, Klaus ^{[1
]}

Boguth, Sabine ^{[1
]}

Treitinger, Ludwig ^{[1
]}

机构：

[1] Infineon Technologies AG, Munich, Germany

来源：

IEEE MTT-S International Microwave Symposium Digest | 2000年 / 2卷

关键词：

Flip flop circuits - Frequency dividing circuits - Frequency synthesizers - Integrated circuit layout - Logic circuits - Microprocessor chips - Semiconducting silicon compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We present a dual-modulus prescaler manufactured in SiGe bipolar technology. The circuit has selectable divide ratios of 256 and 257 and is intended for use in frequency synthesizers. It operates up to a maximum frequency of 20 GHz with a supply voltage of 2.3 V and a power consumption of only 27 mW.

引用

页码：731 / 734