Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process

被引：0
|
作者：
Matsuzaki, Yuichi [1 ]
Yuasa, Ken-Ichiro [1 ]
Shirakashi, Jun-Ichi [2 ]
Chilla, Eduard K. [3 ]
Yamada, Akira [1 ]
Konagai, Makoto [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Tokyo Inst. Technol., 2-12-1 O., Tokyo, Japan
[2] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305-0045, Ibaraki, Japan
[3] Res. Ctr. Quant. Effect Electronics, Tokyo Inst. Technol., 2-12-1 O., Tokyo, Japan
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：656 / 659
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