Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process

被引：0
|
作者：
Matsuzaki, Yuichi [1 ]
Yuasa, Ken-Ichiro [1 ]
Shirakashi, Jun-Ichi [2 ]
Chilla, Eduard K. [3 ]
Yamada, Akira [1 ]
Konagai, Makoto [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Tokyo Inst. Technol., 2-12-1 O., Tokyo, Japan
[2] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305-0045, Ibaraki, Japan
[3] Res. Ctr. Quant. Effect Electronics, Tokyo Inst. Technol., 2-12-1 O., Tokyo, Japan
来源：
Journal of Crystal Growth | 1999年 / 201卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：656 / 659
相关论文
共 50 条
  • [21] RADIATIVE RECOMBINATION IN LIGHTLY AND HEAVILY DOPED P-TYPE GAAS
    NASLEDOV, DN
    NEGRESKU.VV
    TSARENKO.BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1012 - +
  • [22] RECTIFICATION IN HEAVILY DOPED P-TYPE GAAS/ALAS HETEROJUNCTIONS
    YOFFE, GW
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 1081 - 1083
  • [23] CARBON DIFFUSION IN UNDOPED, N-TYPE, AND P-TYPE GAAS
    CUNNINGHAM, BT
    GUIDO, LJ
    BAKER, JE
    MAJOR, JS
    HOLONYAK, N
    STILLMAN, GE
    APPLIED PHYSICS LETTERS, 1989, 55 (07) : 687 - 689
  • [24] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS
    SINHA, AK
    SMITH, TE
    LEVINSTEIN, HJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 218 - 224
  • [25] INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS
    MAUDE, DK
    PORTAL, JC
    DMOWSKI, L
    FOSTER, T
    EAVES, L
    NATHAN, M
    HEIBLUM, M
    HARRIS, JJ
    BEALL, RB
    PHYSICAL REVIEW LETTERS, 1987, 59 (07) : 815 - 818
  • [26] TEMPERATURE DEPENDENCE OF RESISTIVITY OF HEAVILY DOPED N-TYPE GAAS
    ANDRIANO.DG
    BRANDT, NB
    IOON, ER
    FISTUL, VI
    CHUDINOV, SM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1915 - &
  • [27] REFLECTIVITY OF HEAVILY DOPED P-TYPE AND N-TYPE SILICON AT THE 3.4 EV AND 4.5 EV PEAK
    BRAMER, BR
    VERTOGEN, G
    PENNING, P
    SOLID STATE COMMUNICATIONS, 1963, 1 (06) : 138 - 143
  • [28] RELATIONSHIP BETWEEN RESISTIVITY AND TOTAL ARSENIC CONCENTRATION IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    FAIR, RB
    WEBER, GR
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 280 - 282
  • [29] INVESTIGATION OF REFLECTION OF INFRARED RADIATION FROM HEAVILY DOPED SAMPLES OF N-TYPE AND P-TYPE PBSE
    VINOGRADOVA, MN
    GUNKO, TS
    UKHANOV, YI
    TSELISHC, NS
    SHERSHNE, LM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (10): : 1686 - +
  • [30] ELECTOREFLECTANCE OF HEAVILY DOPED N-TYPE AND P-TYPE GERMANIUM NEAR DIRECT ENERGY-GAP
    LUKES, F
    HUMLICEK, J
    PHYSICAL REVIEW B, 1972, 6 (02): : 521 - &
12345