Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process

被引：0
|
作者：
Matsuzaki, Yuichi [1 ]
Yuasa, Ken-Ichiro [1 ]
Shirakashi, Jun-Ichi [2 ]
Chilla, Eduard K. [3 ]
Yamada, Akira [1 ]
Konagai, Makoto [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Tokyo Inst. Technol., 2-12-1 O., Tokyo, Japan
[2] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305-0045, Ibaraki, Japan
[3] Res. Ctr. Quant. Effect Electronics, Tokyo Inst. Technol., 2-12-1 O., Tokyo, Japan
来源：
Journal of Crystal Growth | 1999年 / 201卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：656 / 659
相关论文
共 50 条
  • [1] Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process
    Matsuzaki, Y
    Yuasa, K
    Shirakashi, J
    Chilla, EK
    Yamada, A
    Konagai, M
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 656 - 659
  • [2] Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process
    Matsuzaki, Y
    Yamada, A
    Konagai, M
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 509 - 512
  • [3] DIFFUSION OF BORON IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    WILLOUGHBY, AFW
    EVANS, AGR
    CHAMP, P
    YALLUP, KJ
    GODFREY, DJ
    DOWSETT, MG
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2392 - 2397
  • [4] N-TYPE AND P-TYPE DOPING IN ATOMIC LAYER EPITAXY OF GAAS
    TAKANOHASHI, T
    MOCHIZUKI, K
    OZEKI, M
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 39 - 44
  • [5] An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3
    J.-I. Shirakashi
    K. Matsumoto
    M. Konagai
    Applied Physics A, 1998, 66 (Suppl 1) : 1083 - 1087
  • [6] PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    WAGNER, J
    PHYSICAL REVIEW B, 1984, 29 (04): : 2002 - 2009
  • [7] ELASTIC CONSTANTS OF HEAVILY DOPED N-TYPE SI AND P-TYPE GE
    BEILIN, VM
    VEKILOV, YK
    KRASILNI.OM
    SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (03): : 531 - +
  • [8] An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1:5×1021 cm-3
    Shirakashi, J.-I.
    Matsumoto, K.
    Konagai, M.
    Applied Physics A: Materials Science and Processing, 1998, 66 (SUPPL. 1):
  • [9] An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1.5 x 1021 cm-3
    Shirakashi, JI
    Matsumoto, K
    Konagai, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 : S1083 - S1087
  • [10] SELF-ENERGIES OF PHONONS IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
    PINTSCHOVIUS, L
    VERGES, JA
    CARDONA, M
    PHYSICAL REVIEW B, 1982, 26 (10): : 5658 - 5667
12345