Growth mechanism of SiC film on a Si(111)-(7×7) surface by C60 precursor studied by photoelectron spectroscopy

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作者：
Sakamoto, Kazuyuki [1 ]
Kondo, Daiyu [1 ]
Ohno, Kenichi [1 ]
Kimura, Akio [2 ,5 ]
Kakizaki, Akito [3 ]
Suto, Shozo [1 ]
Uchida, Wakio [1 ]
Kasuya, Atsuo [4 ]
机构：
[1] Department of Physics, Graduate School of Science, Tohoku University, Aramaki aza Aoba, Aoba-ku, Sendai 980-8578, Japan
[2] Institute for Solid State Physics, University of Tokyo, Roppongi 7-22-1, Minato-ku, Tokyo 106-8666, Japan
[3] Inst. of Materials Structure Science, High Ener. Accel. Res. Organization, Ohho 1-1, Tsukuba 305-0801, Japan
[4] Ctr. for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba, Aoba-ku, Sendai 980-8578, Japan
[5] Department of Physical Sciences, Faculty of Science, Hiroshima University, Higashi-Hiroshima 739-8526, Japan
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| 1600年 / JJAP, Tokyo, Japan卷 / 39期
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