Far-infrared absorption spectra of quenched germanium were measured under a uniaxial stress along the LT AN BR 100 RT AN BR , LT AN BR 110 RT AN BR and LT AN BR 111 RT AN BR crystallographic orientations. It is concluded from the analyses of the number of the bands split with stress and from the feature of splitting of each band that the SA//1 acceptor, which is the shallowest one in the quenched-in acceptors and has a ground state split into two levels without a uniaxial stress, is constructed from a defect in which the symmetric axis is along a LT AN BR 111 RT AN BR crystallographic axis.