共 50 条
- [1] Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 4188 - 4192
- [2] Fabrication of 0.1 μm complementary metal-oxide-semiconductor devices Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (11 B): : 3277 - 3281
- [3] Plasma doping technology for fabrication of nanoscale metal-oxide-semiconductor devices JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 3210 - 3213
- [4] FABRICATION OF 0.1-MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3277 - 3281
- [5] Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (06): : 2691 - 2697
- [6] Fabrication and Evaluation of Metal-Oxide-Semiconductor Transistor Probe 2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, : 474 - 477
- [9] Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04): : 1562 - 1565
- [10] INVERSION LAYER CARRIER MOBILITY IN METAL-OXIDE-SEMICONDUCTOR DEVICES PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (02): : 683 - 690