ANALYSIS OF THE THRESHOLD VOLTAGE AND ITS TEMPERATURE DEPENDENCE IN ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (EISFET'S).

被引：0
|
作者：
Barabash, Peter R. [1 ]
Cobbold, Richard S.C. [1 ]
Wlodarski, Wojciech B. [1 ]
机构：
[1] Univ of Toronto, Ont, Can, Univ of Toronto, Ont, Can
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 06期
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摘要：
TRANSISTORS, FIELD EFFECT
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页码：1271 / 1282
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