Infrared reflection in the Reststrahlen region of GaN MBE grown epitaxial layers on Si substrates

被引：0
|
作者：
Institute of Vacuum Technology, Ul. Dluga 44/50, 00-241, Warszawa, Poland [1 ]
不详 [2 ]
机构：
来源：
Diamond Relat. Mat. | / 1卷 / 25-28期
关键词：
Number:; 8T11B01909; Acronym:; -; Sponsor:;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
    Pakula, K
    Wysmolek, A
    Korona, KP
    Baranowski, JM
    Stepniewski, R
    Grzegory, I
    Bockowski, M
    Jun, J
    Krukowski, S
    Wroblewski, M
    Porowski, S
    SOLID STATE COMMUNICATIONS, 1996, 97 (11) : 919 - 922
  • [22] Infrared reflectance of GaN films grown on Si(001) substrates
    Zhang, X
    Hou, YT
    Feng, ZC
    Chen, JL
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6165 - 6170
  • [23] Epitaxial GaN films grown on Si(111) with varied buffer layers
    Liaw, HM
    Venugopal, R
    Wan, J
    Melloch, MR
    SOLID-STATE ELECTRONICS, 2001, 45 (07) : 1173 - 1177
  • [24] Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates
    Shigenaka, K
    Matsushita, K
    Sugiura, L
    Nakata, F
    Hirahara, K
    Uchikoshi, M
    Nagashima, M
    Wada, H
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (08) : 1347 - 1352
  • [25] Reflectance and electroreflectance of MBE grown GaN layers
    Shokhovets, SV
    Goldhahn, R
    Gobsch, G
    Cheng, TS
    Foxon, CT
    PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEW AND SHORT NOTES TO NANOMEETING '97, 1997, : 87 - 90
  • [26] A comparison of galvanomagnetic properties of GaN epitaxial layers grown on silicon and sapphire substrates
    Somogyi, K
    Zhilyaev, YV
    HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 103 - 106
  • [27] Structural study of GaN layers grown on carbonized Si(111) substrates
    Morales, FM
    Ponce, A
    Molina, SI
    Araújo, D
    García, R
    Ristic, J
    Sánchez-García, MA
    Calleja, E
    Cimalla, V
    Pezoldt, J
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 1003 - 1006
  • [28] STM-excited and spectrally resolved luminescence of epitaxial GaN and AlGaN layers grown by MBE
    Ortsiefer, M
    Liebheit, A
    Schwartzkopff, M
    Radojkovic, P
    Gabriel, T
    Hartmann, E
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S371 - S375
  • [29] STM-excited and spectrally resolved luminescence of epitaxial GaN and AlGaN layers grown by MBE
    M. Ortsiefer
    A. Liebheit
    M. Schwartzkopff
    P. Radojkovic
    T. Gabriel
    E. Hartmann
    Applied Physics A, 1998, 66 : S371 - S375
  • [30] Morphological and optical characterization of GaN/AlN heterostructures grown on Si(111) substrates by MBE
    Rinaldi, R
    Antonaci, S
    Anni, M
    Lomascolo, M
    Cingolani, R
    Botchkarev, A
    Morkoc, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 701 - 706
12345