Impurity doping effect on the dislocation density in GaAs on Si(100) grown by migration-enhanced epitaxy

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[1] Nozawa, Kazuhiko

[2] Horikoshi, Yoshiji

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Nozawa, Kazuhiko | 1600年 / 28期

关键词：

Semiconducting Gallium Arsenide;

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[1] IMPURITY DOPING EFFECT ON THE DISLOCATION DENSITY IN GAAS ON SI (100) GROWN BY MIGRATION-ENHANCED EPITAXY
NOZAWA, K
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1877 - L1879
[2] LOW THREADING DISLOCATION DENSITY GAAS ON SI(100) WITH INGAAS/GAAS STRAINED-LAYER SUPERLATTICE GROWN BY MIGRATION-ENHANCED EPITAXY
NOZAWA, K
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (4B): : L668 - L671
[3] LOW THREADING DISLOCATION DENSITY GAAS ON SI(100) WITH INGAAS/GAAS STRAINED-LAYER SUPERLATTICE GROWN BY MIGRATION-ENHANCED EPITAXY
NOZAWA, K
HORIKOSHI, Y
JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (06) : 641 - 645
[4] Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy
Nozawa, Kazuhiko
Horikoshi, Yoshiji
1600, (30):
[5] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY
NOZAWA, K
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 626 - 631
[6] Misorientation in GaAs on Si grown by migration-enhanced epitaxy
Nozawa, Kazuhiko
Horikoshi, Yoshiji
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 626 - 631
[7] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY - COMMENTS
RIESZ, F
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4754 - 4755
[8] Comments on 'misorientation in GaAs on Si grown by migration-enhanced epitaxy'
Riesz, Ferenc
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (10): : 4754 - 4755
[9] INITIAL GROWTH-CONDITIONS OF GAAS ON (100)SI GROWN BY MIGRATION-ENHANCED EPITAXY
STOLZ, W
NAGANUMA, M
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (03): : L283 - L286
[10] Effects of annealing on the structural properties of GaAs on Si(100) grown at a low temperature by migration-enhanced epitaxy
Nozawa, Kazuhiko, 1600, (29):

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