共 50 条
- [41] SURFACE INTERVALLEY SCATTERING ON GAAS(110) STUDIED WITH PICOSECOND LASER PHOTOEMISSION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 910 - 914
- [42] Photoemission studies of K-promoted oxidation of the GaAs(110) surface JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (02): : 325 - 328
- [43] SURFACE INTERVALLEY SCATTERING ON GAAS (110) STUDIED WITH PICOSECOND LASER PHOTOEMISSION SCIENCE OF SUPERCONDUCTIVITY AND NEW MATERIALS, 1989, 18 : 245 - 252
- [44] SURFACE PHOTOVOLTAGE AT CS/GAAS(110) - PHOTOEMISSION EXPERIMENTS AND THEORETICAL MODELING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2108 - 2113
- [45] SURFACE-BARRIER AND POLARIZATION EFFECTS IN THE PHOTOEMISSION FROM GAAS(110) PHYSICAL REVIEW B, 1993, 47 (04): : 2251 - 2264
- [46] PHOTOEMISSION MEASUREMENTS OF SURFACE STATES ON GAAS (111), (III) AND (110) SURFACES BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 408 - 408
- [48] PHOTOEMISSION-STUDY OF THE ANNEALED PD/GAAS(110) INTERFACE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 990 - 993
- [50] PHOTOEMISSION-STUDY OF THE DEVELOPMENT OF THE TI/GAAS(110) INTERFACE PHYSICAL REVIEW B, 1986, 33 (04): : 2191 - 2197