GaAs heteroepitaxial growth on an InP (001) substrate

被引：0

作者：

Tanaka, Ichiro ^{[1
]}

Ohkouchi, Shunsuke ^{[1
]}

机构：

[1] Optoelectronics Technology Research, Lab, Tsukuba, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 9 B期

关键词：

Crystals--Epitaxial Growth - Microscopic Examination--Scanning Electron Microscopy - Molecular Beam Epitaxy - Semiconducting Indium Phosphide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have observed GaAs growth processes on an InP (001) surface thermally cleaned in an arsenic flux using a multichamber ultrahigh-vacuum scanning tunneling microscope (UHV-STM) equipped with a molecular beam epitaxy (MBE) facility. When either 1 monolayer (ML) or 1.5 ML GaAs was deposited on an InP (001) surface, two-dimensional growth was observed. On the other hand, island formation was observed for 2.5 ML GaAs deposition.

引用

页码：1662 / 1664