New techniques for the characterization of defect levels in semi-insulating materials

被引：0
|
作者：
Longeaud, C. [1 ]
Kleider, J.P. [1 ]
Kaminski, P. [1 ]
Kozlowski, R. [1 ]
Pawlowski, M. [1 ]
Cwirko, R. [1 ]
机构：
[1] Universites Paris VI et XI, Gif sur Yvette, France
来源：
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC | 1999年
关键词：
Crystal defects - Crystal growth from melt - Deep level transient spectroscopy - Electron energy levels - Electron traps - Light emitting diodes - Photocurrents;
D O I：
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中图分类号：
学科分类号：
摘要：
Deep levels in semi-insulating (SI) GaAs have been investigated by two complementary techniques: the high resolution photoinduced transient spectroscopy performed at the Institute of Electronic Materials Technology, and the modulated photocurrent experiment performed at the Laboratoire de Genie Electrique de Paris. In this paper we present and compare results obtained by both techniques for SI GaAs.
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页码：72 / 75
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