Improvement of ballasting for silicon bipolar power transistor

被引:0
|
作者
Zhou, Rong
Hu, Sifu
Zhang, Qingzhong
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:486 / 489
相关论文
共 50 条
  • [41] A novel double heterojunction bipolar transistor for power amplifiers
    Hsin, YM
    Lin, CH
    Fan, CC
    Huang, MF
    Lin, KC
    2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2000, : 124 - 127
  • [42] HETEROJUNCTION BIPOLAR-TRANSISTOR DESIGN FOR POWER APPLICATIONS
    GAO, GB
    MORKOC, H
    CHANG, MCF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 1987 - 1997
  • [43] BIPOLAR TRANSISTOR AS POWER AMPLIFIER .2. MEASUREMENTS
    ROTHE, H
    ARCHIV DER ELEKTRISCHEN UND UBERTRAGUNG, 1968, 22 (10): : 501 - &
  • [44] High-low emitter bipolar power transistor
    Univ of Arkansas, Fayetteville, United States
    Microelectron J, 1 (1-7):
  • [45] A HIGH-LOW EMITTER BIPOLAR POWER TRANSISTOR
    ANG, SS
    MICROELECTRONICS JOURNAL, 1995, 26 (01) : 1 - 7
  • [46] An analytical model of power bipolar transistor for circuit simulation
    Fatemizadeh, B
    Lauritzen, PO
    1996 IEEE WORKSHOP ON COMPUTERS IN POWER ELECTRONICS, 1996, : 132 - 135
  • [47] EMPIRICAL-ANALYSIS OF EMITTER BALLASTING RESISTANCE EFFECTS ON STABILITY IN POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
    SEILER, U
    KOENIG, E
    SALZ, U
    NAROZNY, P
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 : 183 - 188
  • [48] HIGH-GAIN 9-25 GHZ SILICON BIPOLAR-TRANSISTOR POWER-AMPLIFIER
    WU, YS
    YUAN, HT
    WISSEMAN, WR
    ELECTRONICS LETTERS, 1979, 15 (03) : 86 - 87
  • [49] Silicon Carbide Bipolar Power Devices
    Ostling, M.
    Ghandi, R.
    Malm, B. G.
    Buono, B.
    Zetterling, C-M
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 189 - 200
  • [50] POWER SILICON MICROWAVE MOS-TRANSISTOR
    OAKES, JG
    WICKSTROM, RA
    TREMERE, DA
    HENG, TMS
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 305 - 311