Induced defects in ZnS by electron and proton irradiation and defect-annealing behavior

被引：0
|
作者：
Brunner, S. [1 ]
Puff, W. [1 ]
Balogh, A.G. [2 ]
Mascher, P. [3 ]
机构：
[1] Institut für Technische Physik, Technische Universität Graz, Petersgrasse 16, 8010 Graz, Austria
[2] Department of Materials Science, Technische Hochschule Darmstadt, Darmstadt, Germany
[3] Department of Engineering Physics, McMaster University, Hamilton, Ont., Canada
来源：
Physica B: Condensed Matter | 1999年 / 273卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：898 / 901
相关论文
共 50 条
  • [31] Study on proton irradiation induced defects in GaN thick film
    Zhang Ming-Lan
    Yang Rui-Xia
    Li Zhou-Xin
    Cao Xing-Zhong
    Wang Bao-Yi
    Wang Xiao-Hui
    ACTA PHYSICA SINICA, 2013, 62 (11)
  • [32] DYNAMIC OBSERVATION OF FORMATION OF DEFECTS IN SILICON UNDER ELECTRON AND PROTON IRRADIATION
    MATTHEWS, MD
    ASHBY, SJ
    PHILOSOPHICAL MAGAZINE, 1973, 27 (06): : 1313 - 1322
  • [33] MINORITY-CARRIER INJECTION ANNEALING OF ELECTRON IRRADIATION-INDUCED DEFECTS IN INP SOLAR-CELLS
    YAMAGUCHI, M
    ANDO, K
    YAMAMOTO, A
    UEMURA, C
    APPLIED PHYSICS LETTERS, 1984, 44 (04) : 432 - 434
  • [34] Secondary defects induced by ion and electron irradiation of GaSb
    Nitta, Noriko
    Taguchi, Eiji
    Yasuda, Hidehiro
    Mori, Hidetaro
    Hayashi, Yoshihiko
    Yoshiie, Toshimasa
    Taniwaki, Masafumi
    PHILOSOPHICAL MAGAZINE LETTERS, 2011, 91 (03) : 223 - 228
  • [35] Defects induced by electron irradiation in CdSe thin films
    Ion, L
    Antohe, VA
    Antohe, S
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (04): : 1847 - 1858
  • [36] Electron irradiation induced defects in n-GaN
    Goodman, SA
    Auret, FD
    Legodi, MJ
    Myburg, G
    Beaumont, B
    Gibart, P
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 43 - 46
  • [37] Aging and annealing effects on the magnetic ordering induced by proton irradiation in graphite
    Han, K. -H.
    Esquinazi, P.
    Diaconu, M.
    Schmidt, H.
    Spemann, D.
    Butz, T.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 48 (06) : 1427 - 1431
  • [38] LOW-TEMPERATURE ANNEALING OF IRRADIATION-INDUCED DEFECTS IN LIF
    WIEGAND, DA
    SMOLUCHOWSKI, R
    PHYSICAL REVIEW, 1959, 116 (05): : 1069 - 1080
  • [39] ANNEALING OF IRRADIATION-INDUCED DEFECTS IN ARSENIC-DOPED SILICON
    EVWARAYE, AO
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1840 - 1843
  • [40] Radiation induced defects in Cu(In,Ga)Se2 solar cells -: Comparison of electron and proton irradiation
    Rau, U
    Jasenek, A
    Schock, HW
    Werner, JH
    La Roche, G
    Robben, A
    Bogus, K
    CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 1032 - 1037
12345