Measurements of electroluminescence intensity distribution in the direction of gate width of n+ self-aligned gate GaAs metal-semiconductor field-effect transistors

被引：0

作者：

Niwa, Hiroyuki ^{[1
]}

Ohno, Yutaka ^{[1
]}

Kishimoto, Shigeru ^{[1
]}

Maezawa, Koichi ^{[1
]}

Mizutani, Takashi ^{[1
]}

Yamazaki, Hajime ^{[1
]}

Taniguchi, Toru ^{[1
]}

机构：

[1] Nagoya Univ, Nagoya, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 3 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1363 / 1364

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[1] Measurements of electroluminescence intensity distribution in the direction of gate width of n+ self-aligned gate GaAs metal-semiconductor field-effect transistors
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