Temperature dependent model for hole effective mass in heavily doped p-type SiGe

被引：0

作者：

Sokolic, S. ^{[1
]}

Amon, S. ^{[1
]}

机构：

[1] Univ of Ljubljana, Ljubljana, Slovenia

来源：

Journal De Physique. IV : JP | 1996年 / 6卷 / 03期

关键词：

Band structure - Charge carriers - Electron transport properties - Low temperature effects - Optimization - Semiconducting germanium compounds - Semiconductor device models - Semiconductor doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

As a consequence of compressive strain and alloying, the hole effective mass in p-type strained SiGe differs significantly from its Si value. Influencing the carrier concentrations in the base, the hole effective mass affects the base transport properties of npn SiGe HBTs. A new model for hole effective mass is presented in this work, which takes into consideration the dependence on temperature, doping concentration and germanium fraction. The model is based on experimental data and theoretical studies of the valence band structure supported by the detailed numerical analysis of hole effective mass. It is suitable for efficient analysis and optimization of SiGe HBTs, and can be tuned to the measurements of carrier transport. The model is valid in the temperature range from 77 K to 300 K, for doping concentrations up to 1020cm-3 and for germanium fractions up to 0.2.

引用

页码：137 / 142