EPITAXIAL GROWTH AND SURFACE STRUCTURE OF NiSi2(0 0 1) ON Si(0 0 1).

被引:0
作者
Wu, S.C. [1 ]
Wang, Z.Q. [1 ]
Li, Y.S. [1 ]
Jona, F. [1 ]
Marcus, P.M. [1 ]
机构
[1] State Univ of New York, Stony Brook,, NY, USA, State Univ of New York, Stony Brook, NY, USA
来源
Solid State Communications | 1986年 / 57卷 / 08期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
CRYSTALS
引用
收藏
页码:687 / 690
相关论文
共 50 条
[21]   Structure and chemical order in sputtered epitaxial FePd(0 0 1) alloys [J].
Caro, P ;
Cebollada, A ;
Briones, F ;
Toney, MF .
JOURNAL OF CRYSTAL GROWTH, 1998, 187 (3-4) :426-434
[22]   Anisotropic epitaxial growth of Mn1+xSb thin films on reconstructed(0 0 1) GaAs surface [J].
Miyanishi, S. ;
Akinaga, H. ;
Tanaka, K. .
Physica B: Condensed Matter, 1997, 237-238 :281-282
[23]   Hydrogen effect on solid phase epitaxy of Si on Si (0 0 1) surface [J].
Hasegawa, Masataka ;
Tanaka, Yasunori ;
Kobayashi, Naoto .
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 136-138 :209-213
[24]   Steiner triple systems with automorphism type [1,0,0,0,0,0,0,t,0,...,0,1,0,...,0] [J].
Minic, M ;
Zijlstra, RC .
ARS COMBINATORIA, 2003, 69 :289-300
[25]   Surface-recoil processes of hydrogen on Si (1 0 0)-2×1:H and Si (1 0 0)-1×1:2H surfaces studied by low-energy He ion beams [J].
Shoji, Fumiya ;
Yamada, Akihiko ;
Shiramizu, Tatsuya ;
Oura, Kenjiro .
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 135 (1-4) :366-371
[26]   勿忘(0)1/2=0 [J].
朱凤银 ;
李兵 .
中学数学, 2002, (12) :32-32
[27]   GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient [J].
Doescher, Henning ;
Moeller, Kristof ;
Hannappel, Thomas .
JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) :372-378
[28]   Self-organized growth of higher manganese silicide nanowires on Si(1 1 1), (1 1 0) and (0 0 1) surfaces [J].
Zou, Zhi-Qiang ;
Li, Wei-Cong ;
Liang, Jia-Miao ;
Wang, Dan .
ACTA MATERIALIA, 2011, 59 (20) :7473-7479
[29]   Influence of MgO(1 0 0) substrate surfaces on epitaxial growth of Ti films [J].
Kyoto Univ, Kyoto, Japan .
J Cryst Growth, 1-2 (109-116)
[30]   Growth of c-GaN on carbonized Si(1 0 0) surfaces [J].
Univ of Tsukuba, Ibaraki, Japan .
Journal of Crystal Growth, 189-190 :401-405