PROBLEM OF THE ANOMALIES OF THE LOW-TEMPERATURE TRANSPORT COEFFICIENTS OF Hg1 minus xCdxTe.

被引:0
|
作者
Elizarov, A.I.
Ivanov-Omskii, V.I.
Korniyash, A.A.
Petryakov, V.A.
机构
来源
Soviet physics. Semiconductors | 1984年 / 18卷 / 02期
关键词
MERCURY CADMIUM TELLURIDE;
D O I
暂无
中图分类号
学科分类号
摘要
An investigation was made of the low-temperature anomalies of the electrical resistivity and Hall coefficient of p-type Cd//0//. //2Hg//0//. //8Te crystals which were not subjected to any heat treatment. The presence of anomalies was found to depend largely on the conditions during synthesis of these crystals. A cluster condition mechanism was proposed, according to which the formation of a connected network of paths of flow of the electron current is possible in a p-type material. It was found that the connectivity of one of two interpenetrating clusters may be destroyed in thin samples and this may alter the temperature dependences of the transport coefficients at low temperatures.
引用
收藏
页码:125 / 128
相关论文
共 50 条
  • [21] THE LOW-TEMPERATURE THERMAL-EXPANSION OF HG1-XCDXTE ALLOYS
    CAPORALETTI, O
    GRAHAM, GM
    APPLIED PHYSICS LETTERS, 1981, 39 (04) : 338 - 339
  • [22] Percolation problem in atomic transport in Hg1-xCdxTe
    Mainzer, N
    Zolotoyabko, E
    PHYSICAL REVIEW B, 1999, 60 (24) : 16715 - 16721
  • [23] ON THE ANOMALIES IN THE TEMPERATURE-DEPENDENCE OF CONDUCTIVITY IN HG1-XCDXTE
    ARAPOV, YG
    DAVYDOV, AB
    TSIDILKOVSKII, IM
    SHELUSHININA, NG
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 110 (02): : 619 - 630
  • [24] Low-temperature transport anomalies in FeSi
    Glushkov, VV
    Sluchanko, NE
    Demishev, SV
    Kondrin, MV
    Pronin, AA
    Petukhov, KM
    Bruynseraede, Y
    Moshchalkov, VV
    Menovsky, AA
    PHYSICA B, 2000, 284 : 1179 - 1180
  • [25] THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF Hg1 - xCdxTe SOLID SOLUTIONS AT LOW TEMPERATURES.
    Aliev, S.A.
    1973, 7 (01): : 115 - 116
  • [26] LOW-TEMPERATURE MOCVD OF HG1-XCDXTE ON 311, 511, 711 AND SHAPED GAAS
    PAIN, GN
    SANDFORD, C
    SMITH, GKG
    STEVENSON, AW
    GAO, D
    WIELUNSKI, LS
    RUSSO, SP
    REEVES, GK
    ELLIMAN, R
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 610 - 620
  • [27] LOW-TEMPERATURE ANOMALY IN THE CONDUCTIVITY OF ZERO-GAP SEMICONDUCTORS HG1-XCDXTE
    ARAPOV, YG
    AKHMEDOVA, FI
    DAVYDOV, AB
    TSIDILKOVSKII, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 32 - 35
  • [28] In-Situ monitoring of temperature and alloy composition of Hg1−xCdxTe using FTIR spectroscopic techniques
    M. Daraselia
    C. H. Grein
    S. Rujirawat
    B. Yang
    S. Sivananthan
    F. Aqariden
    H. D. Shih
    Journal of Electronic Materials, 1999, 28 : 743 - 748
  • [29] Transient behavior of Hg1−xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport
    Yu-Ru Ge
    Heribert Wiedemeier
    Journal of Electronic Materials, 1999, 28 : 91 - 97
  • [30] Low-temperature activation of as in Hg1-xCdxTe(211) grown on Si by molecular beam epitaxy
    Boieriu, P
    Chen, Y
    Nathan, V
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (07) : 694 - 698