Interface formation of Ge/ZnSe(100) and Ge/ZnS (111) heterojunctions studied by synchrotron radiation photoemission

被引：0

作者：

Ban, Da-yan

Yang, Feng-yuan

Fang, Rong-chuan

Xu, Shi-hong

Xu, Peng-shou

机构：

来源：

Acta Physica Sinica | 1996年 / 5卷 / 08期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] PHOTOEMISSION-STUDY OF U-GE COMPOUNDS BY THE USE OF SYNCHROTRON RADIATION [J].

SODA, K ;

MORI, T ;

ONUKI, Y ;

KOMATSUBARA, T ;

SUGA, S ;

KAKIZAKI, A ;

ISHII, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1991, 60 (09) :3059-3066

[32] Surface phase transitions of Ge(100) studied via valence band photoemission [J].

Laine, AD ;

DeSeta, M ;

Cepek, C ;

Vandre, S ;

Goldoni, A ;

Franco, N ;

Avila, J ;

Asensio, MC ;

Sancrotti, M .

SURFACE SCIENCE, 1998, 402 (1-3) :871-874

[33] SURFACE ELECTRONIC-STRUCTURE OF SI(111)7X7-GE AND SI(111)5X5-GE STUDIED WITH PHOTOEMISSION AND INVERSE PHOTOEMISSION [J].

MARTENSSON, P ;

NI, WX ;

HANSSON, GV ;

NICHOLLS, JM ;

REIHL, B .

PHYSICAL REVIEW B, 1987, 36 (11) :5974-5981

[34] Experimental determination of valence band offset at PbTe/Ge(100) interface by synchrotron radiation photoelectron spectroscopy [J].

Cai, C. F. ;

Wu, H. Z. ;

Si, J. X. ;

Zhang, W. H. ;

Xu, Y. ;

Zhu, J. F. .

APPLIED SURFACE SCIENCE, 2010, 256 (20) :6057-6059

[35] THE ATOMIC GEOMETRY OF THE GE(111) SURFACE AS A FUNCTION OF TEMPERATURE STUDIED BY PHOTOEMISSION AND PHOTOELECTRON DIFFRACTION [J].

PATTHEY, L ;

BULLOCK, EL ;

HRICOVINI, K .

SURFACE SCIENCE, 1992, 269 :28-34

[36] CHEMICAL NATURE OF INTERFACE IN GE-ZNSE HETEROJUNCTIONS - STUDY WITH MOLECULAR-BEAM TECHNIQUES [J].

BRINKMAN, AW ;

KIRK, DL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (15) :2239-&

[37] The formation of a Sn monolayer on Ge(100) studied at the atomic scale [J].

Hofmann, Emily V. S. ;

Scalise, Emilio ;

Montalenti, Francesco ;

Stock, Taylor J. Z. ;

Schofield, Steven R. ;

Capellini, Giovanni ;

Miglio, Leo ;

Curson, Neil J. ;

Klesse, Wolfgang M. .

APPLIED SURFACE SCIENCE, 2021, 561

[38] ANGLE-RESOLVED PHOTOEMISSION-STUDY OF THE GE/GAAS(100) INTERFACE [J].

SALMON, LG ;

RHODIN, TN .

INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65) :561-568

[39] Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS [J].

Rosei, F ;

Motta, N ;

Sgarlata, A ;

Capellini, G ;

Boscherini, F .

THIN SOLID FILMS, 2000, 369 (1-2) :29-32

[40] Phenol adsorption on Si(111) 7 × 7 studied by synchrotron radiation photoemission and photodesorption [J].

Univ 'Tor Vergata', Rome, Italy .

Surf Sci, 2-3 (114-119)

← 1 2 3 4 5 →