Interface formation of Ge/ZnSe(100) and Ge/ZnS (111) heterojunctions studied by synchrotron radiation photoemission

被引:0
作者
Ban, Da-yan
Yang, Feng-yuan
Fang, Rong-chuan
Xu, Shi-hong
Xu, Peng-shou
机构
来源
Acta Physica Sinica | 1996年 / 5卷 / 08期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
[21]   Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface [J].
Pan, M ;
Wilks, SP ;
Dunstan, PR ;
Pritchard, M ;
Williams, RH ;
Cammack, DS ;
Clark, SA .
APPLIED PHYSICS LETTERS, 1998, 72 (21) :2707-2709
[22]   INITIAL-STAGES OF INTERFACE FORMATION IN GROUP IV-IV SYSTEMS - SN ON GE(100) AND GE(111) [J].
GOSSMANN, HJ .
SURFACE SCIENCE, 1987, 179 (2-3) :453-466
[23]   AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY [J].
CIMINO, R ;
BOSCHERINI, F ;
EVANGELISTI, F ;
PATELLA, F ;
PERFETTI, P ;
QUARESIMA, C .
PHYSICAL REVIEW B, 1988, 37 (03) :1199-1204
[24]   Band lineup of SiOx/ZnS (111) heterojunction:: a synchrotron radiation photoemission study [J].
Xue, JG ;
Ban, DY ;
Fang, RC ;
Lu, ED ;
Xu, PS .
THIN SOLID FILMS, 1998, 334 (1-2) :20-24
[25]   Photoemission study of the gadolinium/GaAs(100) interface with synchrotron radiation [J].
Xu, SH ;
Zhang, FP ;
Lu, ED ;
Yu, XJ ;
Xu, FQ ;
Xu, CS ;
Xu, PS ;
Zhang, XY .
SURFACE REVIEW AND LETTERS, 1997, 4 (01) :25-31
[26]   Texture of Cobalt Germanides on Ge(100) and Ge(111) and Its Influence on the Formation Temperature [J].
De Keyser, K. ;
Van Meirhaeghe, R. L. ;
Detavernier, C. ;
Jordan-Sweet, J. ;
Lavoie, C. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (04) :H395-H404
[27]   Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation [J].
Hosoi, Takuji ;
Kutsuki, Katsuhiro ;
Okamoto, Gaku ;
Yoshigoe, Akitaka ;
Teraoka, Yuden ;
Shimura, Takayoshi ;
Watanabe, Heiji .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
[28]   Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission [J].
Sun, Y ;
Liu, Z ;
Machuca, F ;
Pianetta, P ;
Spicer, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (01) :219-225
[29]   REACTIVE GERMANIUM TRANSITION-METAL INTERFACES INVESTIGATED WITH SYNCHROTRON RADIATION PHOTOEMISSION - GE/NI AND GE/PD [J].
ABBATI, I ;
ROSSI, G ;
BRAICOVICH, L ;
LINDAU, I ;
SPICER, WE .
APPLIED SURFACE SCIENCE, 1981, 9 (1-4) :243-249
[30]   Synchrotron radiation photoemission study of Ge3N4/Ge structures formed by plasma nitridation [J].
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan ;
不详 ;
不详 .
Jpn. J. Appl. Phys., 10 PART 2