CHARACTERISTICS OF A-Si FILMS PREPARED BY COMPRESSED MAGNETIC FIELD (CMF)-MAGNETRON SPUTTERING.

被引：0

作者：

Hata, Tomonobu ^{[1
]}

Kamide, Yukihiro ^{[1
]}

Nakagawa, Shigeki ^{[1
]}

Hattori, Kouji ^{[1
]}

机构：

[1] Kanazawa Univ, Kanazawa, Jpn, Kanazawa Univ, Kanazawa, Jpn

来源：

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1988年 / 71卷 / 02期

关键词：

ELECTRON TUBES; MAGNETRON - SEMICONDUCTING FILMS - SPUTTERING;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The compressed magnetic field magnetron sputtering system has been developed to minimize the damage to the substrate and to enable film deposition at low temperature. High-quality a-Si:H film has been formed by using He whose atomic radius is smaller than that of Ar. In this paper, the characteristics of the compressed magnetic field-magnetron sputtering system are described. The a-Si:H film is characterized by using the partial pressure of hydrogen as a parameter. Moreover, the characteristics and thermoproperty of the film by He sputtering are compared with those of the film by Ar sputtering.

引用

页码：9 / 18