DRY ETCHING OF TiSi2/POLY Si DOUBLE LAYER.

被引：0

作者：

Valyi, G. ^{[1
]}

Szabo, I. ^{[1
]}

Schiller, V. ^{[1
]}

Sandor, S. ^{[1
]}

Andrasi, M. ^{[1
]}

机构：

[1] Central Research Inst for Physics, Budapest, Hung, Central Research Inst for Physics, Budapest, Hung

来源：

Vide, les Couches Minces | 1985年 / 229期

关键词：

INTEGRATED CIRCUITS - Etching - ION BEAMS - Etching - PLASMAS - Applications - TITANIUM COMPOUNDS - Etching;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

MOS circuits using a double layer of TiSi//2 on polycrystalline silicon as gates and interconnects were fabricated. The titanium silicide was made by evaporating 50-100 nm of Ti on polycrystalline Si followed by an annealing at 800 degree C in an inert atmosphere. Etching was made by using a combined dry etching mode: Ion beam etching and a subsequent plasma etching in a barrel-type reactor. By applying this method, the advances of both processes (anisotropic etch profiles and chemial selectivity) can be utilized.

引用

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