DRY ETCHING OF TiSi2/POLY Si DOUBLE LAYER.

被引：0

作者：

Valyi, G. ^{[1
]}

Szabo, I. ^{[1
]}

Schiller, V. ^{[1
]}

Sandor, S. ^{[1
]}

Andrasi, M. ^{[1
]}

机构：

[1] Central Research Inst for Physics, Budapest, Hung, Central Research Inst for Physics, Budapest, Hung

来源：

Vide, les Couches Minces | 1985年 / 229期

关键词：

INTEGRATED CIRCUITS - Etching - ION BEAMS - Etching - PLASMAS - Applications - TITANIUM COMPOUNDS - Etching;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

MOS circuits using a double layer of TiSi//2 on polycrystalline silicon as gates and interconnects were fabricated. The titanium silicide was made by evaporating 50-100 nm of Ti on polycrystalline Si followed by an annealing at 800 degree C in an inert atmosphere. Etching was made by using a combined dry etching mode: Ion beam etching and a subsequent plasma etching in a barrel-type reactor. By applying this method, the advances of both processes (anisotropic etch profiles and chemial selectivity) can be utilized.

引用

共 50 条

[1] DRY ETCHING OF TISI2
CADIEN, KC
SIVARAM, S
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 739 - 743
[2] Electrical properties of TiSi2 clusters in poly Si
Piro, AM
Alessandrino, MS
Bongiorno, C
La Via, F
Spinella, C
Grimaldi, MG
MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) : 197 - 204
[3] HREM OF TISI2/SI AND TISI2/SIO2 INTERFACES
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ORLIKOVSKY, AA
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 297 - 302
[4] THERMAL-DEGRADATION OF TISI2/POLY-SI GATES
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[5] THERMAL-DEGRADATION OF TISI2/POLY-SI GATE ELECTRODES
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OSTLING, M
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[6] FORMATION OF COSI2 AND TISI2 ON NARROW POLY-SI LINES
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[7] INTERACTION OF TISI2 LAYERS WITH POLYCRYSTALLINE SI
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[8] Schottky barrier formation at Al/TiB2/TiSi2/Si and Cu/TiB2/TiSi2/Si interfaces
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[9] FORMATION OF A TISI2/N+POLY-SI LAYER BY RAPID LAMP HEATING AND ITS APPLICATION TO MOS DEVICES
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[10] Morphology and crystallinity of Ti/Si and TiSi2/Si interfaces
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