Identifying the most promising high-k gate dielectrics

被引：0

作者：

Wallace, R.M. ^{[1
]}

Wilk, G.D. ^{[1
]}

机构：

[1] University of North Texas, Denton, TX, United States

来源：

| 2001年 / Cahners Publishing Co. Inc.卷 / 24期

关键词：

Barrier height - High permittivity gate dielectrics - Pseudo binary films;

D O I：

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中图分类号：

学科分类号：

摘要：

The industry is pursuing many paths to identify the best alternative high-k dielectric or dielectric stack. Certain materials hold great promise for this application. In Part 2 of this two-part series, we detail how pseudo-binary films such as metal silicates seem to exhibit the best prospects for interface control and thermal stability in contact with silicon, while also demonstrating compatibility with poly-Si or metal gate electrodes.

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