Integral radioelectronic devices on the equivalents of the p-n-p-n structure

被引：0

|

作者：

Stepanova, L.N.

机构：

来源：

Radiotekhnika | 1993年 / 10-12期

关键词：

6;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

页码：77 / 82

相关论文

共 50 条

[1] INTEGRATED RADIOELECTRONIC DEVICES BASED ON P-N-P-N-STRUCTURE EQUIVALENTS
STEPANOVA, LN
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1993, 48 (05) : 129 - 134
[2] THRESHOLD CIRCUITS USING CONTROLLED EQUIVALENTS OF A P-N-P-N STRUCTURE
AREFYEV, AA
STEPANOVA, LN
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1979, 33-4 (07) : 106 - 109
[3] SPONTANEOUS SWITCHING OF P-N-P-N DEVICES
KUZMIN, VA
BRAZHNIK.VA
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (04): : 618 - +
[4] CRITIQUE OF THEORY OF P-N-P-N DEVICES
GIBBONS, JF
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (09) : 406 - &
[5] TRANSIENT ANALYSIS OF P-N-P-N OPTOELECTRONIC DEVICES
SUDA, DA
HAYES, RE
ROHLEV, AS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (08) : 1858 - 1864
[6] ANALYSIS OF THE TEMPERATURE STABILITY OF THE GAIN OF AMPLIFIERS USING CONTROLLED P-N-P-N STRUCTURE EQUIVALENTS
STEPANOVA, LN
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1980, 34-5 (07) : 71 - 73
[7] TURN-ON CRITERION FOR P-N-P-N DEVICES
GENTRY, FE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (02) : 74 - &
[8] THEORY OF STATIC CHARACTERISTICS OF P-N-P-N DEVICES
KUZMIN, VA
SENATOROV, KY
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (09): : 1508 - +
[9] TRANSIENT CHARACTERISTIC OF P-N-P-N STRUCTURE
LEBEDEV, AA
UVAROV, AI
CHELNOKO.VE
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (08): : 1264 - &
[10] GATE TURN-OFF IN P-N-P-N DEVICES
WOLLEY, ED
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 590 - &

← 1 2 3 4 5 →