Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation

被引：0

作者：

Chai, Kam-Wing ^{[1
]}

Mawby, P.A. ^{[1
]}

McCowen, A. ^{[1
]}

机构：

[1] Univ of Wales, Swansea, United Kingdom

来源：

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields | 1992年 / 5卷 / 01期

关键词：

Computer Simulation - Hydrodynamics - Ionization - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper reviews the state of the art in hydrodynamic simulation of hot-carrier transport in semiconductor devices with application to MOSFET substrate current calculation. Hydrodynamic equations for semiconductors and derived and discretized expressions of these equations for device simulation are presented. Special attention has been given to the discretization of the input power term that appears in the energy conservation equation. A new discretization method for the input power term, based on power generation consideration, is proposed. Energy-based physical models for mobility and impact ionization are described for use in hydrodynamic simulation. Simulation results for both conventional and lightly-doped-drain MOSFETs are presented.

引用

页码：53 / 66