Temperature dependence of Raman spectra in Si-doped GaAs/AlAs multiple quantum wells

被引：0
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作者：
Matsumoto, Toshiyuki [1 ]
Haraguchi, Masanobu [1 ]
Fukui, Masuo [1 ]
Kubo, Hitoshi [1 ]
Hamaguchi, Chihiro [1 ]
机构：
[1] Univ of Tokushima, Tokushima, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 4 A期
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页码：2068 / 2072
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