High-performance diamond surface-channel field-effect transistors and their operation mechanism

被引：0

作者：

Tsugawa, K. ^{[1
]}

Kitatani, K. ^{[1
]}

Noda, H. ^{[1
]}

Hokazono, A. ^{[1
]}

Hirose, K. ^{[1
]}

Tajima, M. ^{[1
]}

Kawarada, H. ^{[1
]}

机构：

[1] Japan Science and Technology Corp, Tokyo, Japan

来源：

Diamond and Related Materials | 1999年 / 8卷 / 02期

关键词：

The authors acknowledge T. Yamashita and T. Ishikura of the Frontier Technology Laboratory of the Tokyo Gas Co. Ltd. for their cooperation and support. The authors also thank N. Fujimori and S. Shikata of the Sumitomo Electric Co. Ltd. for supplying the high-pressure synthetic type-Ib diamond substrates. This work was supported in part by a Grant-in-Aid for Scientific Research (09555103) from the Ministry of Education; Science; Sports and Culture of Japan; and was also supported by a Waseda University Grant for Special Research Projects;

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页码：927 / 933