Molecular beam epitaxial growth and characterization of GaAs films on thin Si substrates

被引：0
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作者：
Maehashi, Kenzo [1 ]
Nakashima, Hisao [1 ]
Bertram, Frank [1 ]
Veit, Peter [1 ]
Christen, Jurgen [1 ]
机构：
[1] Osaka Univ, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 01期
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页码：39 / 44
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