3C-SiC pseudosubstrates for the growth of cubic GaN

被引：0

作者：

Aboughé-Nzé, P. ^{[1
]}

Chassagne, T. ^{[1
]}

Chaussende, D. ^{[1
]}

Monteil, Y. ^{[1
]}

Cauwet, F. ^{[1
]}

Bustarret, E. ^{[2
]}

Deneuville, A. ^{[2
]}

Bentoumi, G. ^{[2
]}

Martinez-Guerrerro, E. ^{[3
]}

Daudin, B. ^{[3
]}

Feuillet, G. ^{[3
]}

机构：

[1] Lab. Multimateriaux et Interfaces, UCBL, 43, Boulevard du 11 Novembre 1918, FR-69100 Villeurbanne Cedex, France

[2] Lab. d'Etud. Proprietes Electron. S., 25 rue des Martyrs, FR-38042 Grenoble Cedex 9, France

[3] Dept. Rech. Fond. sur Matiere Cond., SPMM/PSC, CEA-Grenoble, 17 rue des Martyrs, FR-38054 Grenoble Cedex 9, France

来源：

Materials Science Forum | 2000年 / 338卷

关键词：

Epitaxial growth - Heterojunctions - Nitrides - Semiconducting gallium compounds - Semiconducting silicon compounds - Semiconductor growth - Silicon carbide - Silicon on insulator technology - Silicon wafers - Substrates - Surface roughness - Thick films;

D O I：

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中图分类号：

学科分类号：

摘要：

We report on the successful growth of 3C-SiC/Si and 3C-SiC/SOI heterostructures for the growth of cubic GaN films. Raman results provided moreover direct evidence of the compliant character of the SOI substrate. We show that the GaN surface roughness depends drastically both on the starting SiC surface and its structural quality. Rheed oscillations patterns of β-GaN grown on thick 3C-SiC epilayers with smooth surfaces were observed.

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