Investigation of the Field in a p-n Junction and Base of Silicon Diodes Under Forward Bias.

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作者：

Matosov, M.V.

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| 1972年 / 15卷 / 11期

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中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

In Russian.

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页码：1378 / 1380

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