Influence of hydrogen content and Si-H bond structure on photocreated dangling bonds in hydrogenated amorphous silicon films

被引：0

作者：

Zhang, Q. ^{[1
]}

Nishino, T. ^{[1
]}

Takashima, H. ^{[1
]}

Kumeda, M. ^{[1
]}

Shimizu, T. ^{[1
]}

机构：

[1] Kanazawa Univ, Kanazawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 08期

关键词：

Annealing - Degradation - Hydrogenation - Photoconductivity - Semiconducting silicon - Stability;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Formation and dark annihilation of dangling bonds (DBs) photocreated at 77 K and room temperature have been studied in three types of hydrogenated amorphous silicon (a-Si:H) sample with different hydrogen contents and Si-H bond structures. By comparing the results for the three types of sample, we conclude that the easier photocreation and annihilation of the DBs in the sample with higher hydrogen content are due to the higher flexibility.

引用

页码：4409 / 4412

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