INFLUENCE OF TEMPERATURE DURING 640-MeV PROTON IRRADIATION ON FORMATION OF RADIATION DEFECTS IN n-TYPE SILICON.

An investigation was made of the nature and efficiency of formation of radiation defects in n-type silicon ( rho approximately equals 180 OMEGA . cm) subjected to ″hot″ irradiation with 640-MeV protons. The experimental results deduced from measurements of the Hall effect indicated that the following defects were formed at various stages of such irradiation: A centers, E centers, oxygen-divacancy complexes, oxygen-carbon-divacancy complexes, and intrinsic radiation defects (divacancies and various polyvacancy or interstitial complexes contributing the levels at E//c minus 0. 24, E//v plus 0. 29, and E//v plus 0. 32 eV to the band gap). These intrinsic radiation defects were found mainly in the central parts (cores) of defect clusters produced by irradiation, while impurity-primary defect complexes were usually found at the periphery of such clusters. An increase of the irradiation temperature reduced the size of the clusters.