Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon

被引:0
|
作者
Sam Houston State Univ, Huntsville, United States [1 ]
机构
来源
Appl Phys Lett | / 5卷 / 680-682期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
14
引用
收藏
相关论文
共 50 条
  • [1] Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon
    Donnelly, DW
    Covington, BC
    Grun, J
    Hoffman, CA
    Meyer, JR
    Manka, CK
    Glembocki, O
    Qadri, SB
    Skelton, EF
    APPLIED PHYSICS LETTERS, 1997, 71 (05) : 680 - 682
  • [2] Athermal annealing of neutron-transmutation-doped silicon
    Grun, J
    Manka, CK
    Hoffman, CA
    Meyer, JR
    Glembocki, J
    Qadri, SB
    Skelton, EF
    Donnelly, D
    Covington, B
    SHOCK COMPRESSION OF CONDENSED MATTER - 1997, 1998, 429 : 981 - 984
  • [3] FAR-INFRARED ABSORPTION OF NEUTRON-TRANSMUTATION-DOPED GERMANIUM
    JANG, HF
    CRIPPS, G
    TIMUSK, T
    PHYSICAL REVIEW B, 1990, 41 (08): : 5152 - 5168
  • [4] EPR STUDY OF ANNEALING BEHAVIOR OF NEUTRON-TRANSMUTATION-DOPED SILICON
    STETTER, G
    COUFAL, H
    LUSCHER, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : K17 - K20
  • [5] ANNEALING BEHAVIOR OF EXCESS CARRIERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    MAEKAWA, T
    NOGAMI, S
    INOUE, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) : 459 - 467
  • [6] CHARACTERISTICS OF ANNEALING OF RECOMBINATION CENTERS IN NEUTRON-TRANSMUTATION-DOPED SILICON
    KOLKOVSKII, II
    SHUSHA, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1195 - 1197
  • [7] ANNEALING STUDIES OF CZOCHRALSKI-GROWN NEUTRON-TRANSMUTATION-DOPED SILICON
    CLELAND, JW
    FUKUOKA, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C386 - C386
  • [8] HOLE TRAP ANNEALING IN NEUTRON-TRANSMUTATION-DOPED SILICON WITH DIFFERENT INITIAL RESISTIVITIES
    MAEKAWA, T
    INOUE, S
    USAMI, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (07) : 663 - 668
  • [9] INFRARED-ABSORPTION STUDY OF NEUTRON-TRANSMUTATION-DOPED GERMANIUM
    PARK, IS
    HALLER, EE
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) : 6775 - 6779
  • [10] Neutron transmutation doped far-infrared p-Ge laser
    Nelson, EW
    Flitsiyan, ES
    Muravjov, AV
    Dolguikh, MV
    Peale, RE
    Kleckley, SH
    Vernetson, WG
    Tsipin, VZ
    HIGH-POWER FIBER AND SEMICONDUCTOR LASERS, 2003, 4993 : 10 - 19