PHOTOLUMINESCENCE OF beta -SiC SYNTHESIZED BY THE ION IMPLANTATION METHOD.

被引：0

作者：

Akimchenko, I.P.

Vavilov, V.S.

Krasnopevtsev, V.V.

Milyutin, Yu.V.

Chan Kim Loi

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1973年 / 7卷 / 05期

关键词：

PHOTOLUMINESCENCE - Spectrum Analysis;

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摘要：

A study of the photoluminescence of silicon carbide films synthesized by the implantation of Si ions into diamond crystals containing about 2 multiplied by 10**2**0 cm**-**3 of nitrogen is described. The photoluminescence spectra were investigated between 4000-8000A at 77K, establishing that the implantation of the Si ions into diamond crystals containing nitrogen produced the cubic modification of SiC without any need for annealing. The synthesized films of beta -SiC had n-type conduction. The resistivity, measured after annealing at 1200 degree C, of a film of beta -SiC with a nearly stoichiometric composition was 10**-**2 OMEGA . cm.

引用

页码：659 / 660