CHARACTERISTICS OF RADIATION DAMAGE OF SILVER-DOPED P-TYPE GERMANIUM.

被引:0
作者
Mamontov, A.M.
Baryshev, N.S.
Polozova, I.E.
机构
来源
| 1978年 / 12卷 / 12期
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中图分类号
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号
0805 ; 080502 ; 080801 ; 0809 ;
摘要
Samples of p-type germanium doped with silver and compensated with antimony were irradiated with 8. 5 MeV electrons at room temperature. The main result was an increase in the hole density. This was attributed to an increase in the concentration of the ''active'' silver at the lattice sites. (AIP)
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页码:1430 / 1431
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