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- [23] Low-Driving-Current High-Speed Direct Modulation up to 40 Gb/s Using 1.3-μm Semi-Insulating Buried-Heterostructure AlGaInAs-MQW Distributed Reflector (DR) Lasers OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5, 2009, : 1743 - 1745
- [24] Improved high-temperature and high-power characteristics of 1.3-μm spot-size converter integrated all-selective metalorganic vapor phase epitaxy grown planar buried heterostructure laser diodes by newly introduced multiple-stripe recombination layers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1234 - 1238
- [25] Improved high-temperature and high-power characteristics of 1.3-μm spot-size converter integrated all-selective metalorganic vapor phase epitaxy grown planar buried heterostructure laser diodes by newly introduced multiple-stripe recombination layers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1234 - 1238