High-speed 1.3-μm in GaAsP buried crescent lasers with Fe-doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine

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  • [1] HIGH-SPEED 1.3-MU-M INGAASP BURIED CRESCENT LASERS WITH FE-DOPED INP CURRENT BLOCKING LAYERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE
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    KEO, S
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    WOLF, D
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    JIANG, CL
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    JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 1061 - 1063
  • [2] WIDE-BANDWIDTH AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT LASERS WITH SEMIINSULATING FE-DOPED INP CURRENT BLOCKING LAYERS
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  • [3] HIGH-QUALITY FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE
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    APPLIED PHYSICS LETTERS, 1991, 58 (02) : 170 - 172
  • [4] HIGH-QUALITY INP LAYERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE AND PHOSPHINE
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    APPLIED PHYSICS LETTERS, 1991, 59 (03) : 268 - 270
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