Effects of relative position between SiGe/Si interface and pn junction (EB) in SiGe/Si HBT

被引：0
|
作者：
Xu, Chen [1 ]
Shen, Guangdi [1 ]
Zou, Deshu [1 ]
Chen, Jianxin [1 ]
Li, Jianjun [1 ]
Luo, Ji [1 ]
Wei, Huan [1 ]
Zhou, Jing [1 ]
Dong, Xin [1 ]
机构：
[1] Beijing Polytechnic Univ, Beijing, China
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2000年 / 28卷 / 08期
关键词：
Mathematical models - Segregation (metallography);
D O I：
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学科分类号：
摘要：
The effects of the relative position between the interfaces of pn junction (emitter-base) and SiGe/Si on the current gain and frequency performance of SiGe/Si HBT were investigated by simulation and experiment, It was found that the performance of the HBT will degrade as the two interfaces segregate, and a considerable parasitic barrier will be formed if SiGe/Si interface is only tens angstroms away from pn junction interface towards the base, drastically deteriorating the current gain and cutoff frequency. Based on this, the effects of B dopant segregation and out diffusion in the base of SiGe/Si HBT and i-SiGe spacers were investigated.
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页码：63 / 65
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